2SJ603 Datasheet Mos Field Effect Transistor

Manufacturer: Kexin Semiconductor

Overview: SMD Type MOS Field Effect Transistor 2SJ603 MOSFET.

Datasheet Details

Low on-resistance RDS(on)1 = 48 m MAX. (VGS =-10 V, ID = -13A) RDS(on)2 = 75m MAX. (VGS = -4.0 V, ID =-13 A) Low Ciss: Ciss = 1900 pF TYP. Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source.

Brand Logo	Part Number	Description	Manufacturer
	2SJ603	MOS FIELD EFFECT TRANSISTOR	NEC
	2SJ603	60V P-Channel MOSFET	VBsemi

Part Number	Description
2SJ603-ZJ	P-Channel MOSFET
2SJ600	MOSFET
2SJ600-Z	P-Channel MOSFET
2SJ601	MOS Field Effect Transistor
2SJ602	MOS Field Effect Transistor
2SJ602-ZJ	P-Channel MOSFET
2SJ604	MOS Field Effect Transistors
2SJ604-ZJ	P-Channel MOSFET
2SJ605	MOS Field Effect Transistors
2SJ605-ZJ	P-Channel MOSFET