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2SK1954 - MOS Field Effect Power Transistor

Key Features

  • Low on-resistance RDS(on)=0.65 (VGS=10V,ID=2A) Low Ciss Ciss=300pF typ Built-in G-S Gate Protection Diode High Avalanche Capability Ratings +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source vo.

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SMD Type MOSFICET MOS Field Effect Power Transistor 2SK1954 Features Low on-resistance RDS(on)=0.65 (VGS=10V,ID=2A) Low Ciss Ciss=300pF typ Built-in G-S Gate Protection Diode High Avalanche Capability Ratings +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol Rating Unit VDSS 180 V VGSS 20 V ID 4.