2SK1959
2SK1959 is N-CHANNEL MOSFET manufactured by Renesas.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
Features
- Gate can be driven by 1.5 V
- Low ON resistance
RDS(on) = 3.2 Ω MAX. @ VGS = 1.5 V, ID = 50 mA RDS(on) = 0.5 Ω MAX. @ VGS = 4.0 V, ID = 1.0 A
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1 1.6 ±0.2
1.5 ±0.1
0.8 MIN. 2.5 ±0.1
4.0 ±0.25
0.42 ±0.06
1.5 0.47 ±0.06
0.42 ±0.06
+0.03
- 0.05
Marking: NQ
EQUIVALENT...
