The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1959
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
FEATURES • Gate can be driven by 1.5 V • Low ON resistance
RDS(on) = 3.2 Ω MAX. @ VGS = 1.5 V, ID = 50 mA RDS(on) = 0.5 Ω MAX. @ VGS = 4.0 V, ID = 1.0 A
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1 1.6 ±0.2
1.5 ±0.1
0.8 MIN. 2.5 ±0.1
4.0 ±0.25
D
S
G
0.42 ±0.06
1.5 0.47 ±0.06
3.0
0.42 ±0.06
0.41
+0.03 –0.
2SK1959 Datasheet
