2SK1959
2SK1959 is N-Channel MOSFET manufactured by NEC.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1 1.6 ±0.2 1.5 ±0.1
- Gate can be driven by 1.5 V
- Low ON resistance RDS(on) = 3.2 Ω MAX. RDS(on) = 0.5 Ω MAX. @ VGS = 1.5 V, ID = 50 mA @ VGS = 4.0 V, ID = 1.0 A
0.8 MIN.
Features
S 0.42 ±0.06 1.5
0.42 ±0.06 0.47 ±0.06 3.0 0.41 +0.03
- 0.05 Marking: NQ
EQUIVALENT CURCUIT
Drain (D)
Gate (G)...
