The 2SK1959 is a N-CHANNEL MOSFET.
| Pins | 3 |
|---|---|
| Height | 1.6 mm |
| Length | 2 mm |
| Width | 4 mm |
| Part Number | 2SK1959 Datasheet |
|---|---|
| Manufacturer | Renesas |
| Overview |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1959
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is.
* Gate can be driven by 1.5 V * Low ON resistance RDS(on) = 3.2 Ω MAX. @ VGS = 1.5 V, ID = 50 mA RDS(on) = 0.5 Ω MAX. @ VGS = 4.0 V, ID = 1.0 A PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 0.8 MIN. 2.5 ±0.1 4.0 ±0.25 D S G 0.42 ±0.06 1.5 0.47 ±0.06 3.0 0.42 ±0.06 0.41 +0.03 *0.0. |
| Part Number | 2SK1959 Datasheet |
|---|---|
| Description | 30V N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
2SK1959-VB
2SK1959-VB Datasheet
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V 30
0.030 at VGS = 2.5 V
ID (A)a 6.8 6.0
Qg (Typ.) 10 nC
FEA.
* Halogen-free * Trench Power MOSFET APPLICATIONS * Load Switches for Portable Devices RoHS COMPLIANT D D G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC . |
| Part Number | 2SK1959 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
N-Channel MOSFET 2SK1959
MOSFET
■ Features
● VDS (V) = 16V ● ID = 2A ● RDS(ON) ＜ 3.2Ω (VGS = 1.5V) ● RDS(ON) ＜ 0.5Ω (VGS = 4V)
Drain (D)
Gate (G)
Gate protection diode
Source (S)
Inter.
* VDS (V) = 16V * ID = 2A * RDS(ON) ＜ 3.2Ω (VGS = 1.5V) * RDS(ON) ＜ 0.5Ω (VGS = 4V) Drain (D) Gate (G) Gate protection diode Source (S) Internal diode * Absolute Maximum Ratings Ta = 25℃ 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Parameter Drain-Source Voltage Gate-Source Voltage. |
| Part Number | 2SK1959 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | NEC |
| Overview |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1959
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it .
S 0.42 ±0.06 1.5
D
G
0.42 ±0.06 0.47 ±0.06 3.0 0.41 +0.03 *0.05 Marking: NQ EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source. |
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