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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1958
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
2.1 ±0.1 1.25 ±0.1
2.0 ±0.2 +0.1 0.3 –0 0.65 0.65
FEATURES
• Gate can be driven by 1.5 V • Because of its high input impedance, there’s no need to consider drive current components required can be reduced • Since bias resistance can be omitted, the number of
G S
+0.1 +0.1
0.3
Marking
0.15 –0.05
0.9 ±0.1
0 to 0.
2SK1958 Datasheet
