2SK1960 Datasheet N-channel Enhancement MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type N-Channel Enhancement MOSFET 2SK1960 MOSFICET.

Datasheet Details

Part number	2SK1960
Manufacturer	Kexin Semiconductor
File Size	857.96 KB
Description	N-Channel Enhancement MOSFET
Datasheet	2SK1960-Kexin.pdf

Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX. @VGS=1.5V,ID=0.1A RDS(on)=0.2 MAX. @VGS=4.0V,ID=1.5A 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 16 V VGS ±7 Continuous Drain Current ID ±3 A Pulsed Drain Current PW ≤10ms,duty cycle ≤50% IDM ±6 Power Dissipation Junction Temperature Storage Temperature Range PD 2 W TJ 150 ℃ Tstg -55 to 150.

Brand Logo	Part Number	Description	Manufacturer
	2SK1960	N-Channel MOSFET	NEC
	2SK1960	30V N-Channel MOSFET	VBsemi

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