2SK1960 Datasheet | Kexin Semiconductor

Features Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage ±7 Continuous Drain Current ±3 Pulsed Drain Current PW ≤10ms,duty cycle ≤50% ±6 Power Dissipation Junction Temperature Storage Temperature Range ℃ Tstg -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol VDSS IDSS IGSS VGS(off) RDS(On)1 RDS(On)2 RDS(On)3 g FS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=250μA, VGS=0V VDS=16V, VGS=0V VDS=0V, VGS=±7V VDS=3V, ID=1m A VGS=1.5V, ID=0.1A VGS=2.5V, ID=1.5A VGS=4V, ID=1.5A VDS=3V, ID=1.5A VGS=0V, VDS=3V, f=1MHz ID=1.5A, VDS=3V, ,RGEN=10Ω,RL=2Ω VGS(on) = 3 V Min Typ Max Unit 1...