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2SK1960 - N-Channel Enhancement MOSFET

Key Features

  • Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX. @VGS=1.5V,ID=0.1A RDS(on)=0.2 MAX. @VGS=4.0V,ID=1.5A 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 16 V VGS ±7 Continuous Drain Current ID ±3 A Pulsed Drain Current PW ≤10ms,duty cycle ≤50% IDM ±6 Power Dissipation Junction Temperature Storage Temperature Range PD 2 W TJ 150 ℃ Tstg -55 to 150.

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SMD Type N-Channel Enhancement MOSFET 2SK1960 MOSFICET Features Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.