2SK1960 Datasheet | NEC

FEATURES S 0.42 ±0.06 1.5 0.42 ±0.06 0.47 ±0.06 3.0 0.41 +0.03 - 0.05 Marking: NR EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW ≤ 10 ms, duty cycle ≤ 50 % 16 cm2 × 0.7 mm ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 16 ± 7.0 ± 3.0 ± 6.0 2.0 150 - 55 to +150 UNIT V V A A W ˚C ˚C Document No. D11223EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan 4.0 ±0.25 2.5 ±0.1 © ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf VDD = 3 V, ID = 1.5 A, VGS(on) = 3 V, RG = 10 Ω, RL = 2 Ω TEST CONDITIONS VDS = 16 V, VGS = 0 VGS = ± 7.0 V, VDS = 0 VDS = 3 V, ID = 1 m A VDS = 3 V, ID = 1.5 A VGS = 1.5 V, ID = 0.1 A VGS = 2.5 V, ID = 1.5 A VGS = 4.0 V, ID = 1.5 A VDS = 3 V, VGS = 0, f = 1.0 MHz 0.5 2.0 0.35 0.17 0.12 370 320 115 70 200 150 200 0.8 0.3 0.2 0.8 MIN. TYP. MAX. 1.0 ± 3.0 1.1 UNIT µA µA V S Ω Ω Ω p F p F p F ns ns ns ns TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 10 5 d T - Derating Factor - % FORWARD BIAS SAFE OPERATING AREA 1 10 m s m s - Drain Current - A 2 1 0.5 = 0 m s 0.2 0.1 Single pulse 1 2 5 10 20 VDS - Drain to Source...