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2SK2859 - N-Channel Silicon MOSFET

Key Features

  • Low On resistance. Ultrahigh-speed switching. 4V drive. 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5-8 : Drain Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% Symbol Rating Unit VDSS 100 V VGSS 15 V ID 2 A Idp.
  • 8 A PD 1.6 W Tch 150 Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Drain to source breakdown.

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SMD Type N-Channel Silicon MOSFET 2SK2859 MOSFET Features Low On resistance. Ultrahigh-speed switching. 4V drive. 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5-8 : Drain Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol Rating Unit VDSS 100 V VGSS 15 V ID 2 A Idp * 8 A PD 1.