2SK2859 Datasheet | Kexin Semiconductor

Features Low On resistance. Ultrahigh-speed switching. 4V drive. 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5-8 : Drain Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature - PW 10 s,Duty Cycle 1% Symbol Rating Unit VDSS VGSS Idp - 8 Tch Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode forward voltage Symbol Testconditons Min Typ Max Unit VDSS ID=1m A,VGS=0 IDSS VDS=100V,VGS=0 IGSS VGS= 12V,VDS=0 VGS(off) VDS=10V,ID=1m A 2.0...