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2SK2859 - N-Channel MOSFET

Key Features

  • Low On resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Package Dimensions unit:mm 2149 [2SA2859] 8 5 0.3 5.0 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 4.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperatu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features · Low On resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2149 [2SA2859] 8 5 0.3 5.0 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 4.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Mounted on a ceramic board (10002×0.8mm) PW≤10µs, duty cycle≤1% Conditions Ratings 100 ±15 2 8 1.