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2SK3030DS - N-Channel Enhancement MOSFET

Key Features

  • VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 0.4 Unit: mm +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 1 2 D 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0.15 +0.02 -0.02 +0.2 1.1 -0.1 G S 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current.
  • Power Dissipat.

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SMD Type TraMnOsiSsFtoErsT N-Channel Enhancement MOSFET 2SK3030DS Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 0.4 Unit: mm +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 1 2 D 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0.15 +0.02 -0.02 +0.2 1.1 -0.1 G S 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current * Power Dissipation TA=25 TA=70 Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA Rthc TJ, TSTG Rating 30 12 5.8 4.9 30 1.