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2SK3048DS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 3A.
  • RDS(ON) < 105mΩ @ VGS = 10V.
  • RDS(ON) < 125mΩ @ VGS = 4.5V D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power D.

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SMD Type N-Channel MOSFET 2SK3048DS TraMnOsiSsFtoErsT ■ Features ● VDS (V) = 60V ● ID = 3A ● RDS(ON) < 105mΩ @ VGS = 10V ● RDS(ON) < 125mΩ @ VGS = 4.5V D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation Thermal Resistance from Junction to Ambient (Note 2) Junction Temperature Storage Temperature Range Notes: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s.