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2SK3046DS - N-Channel MOSFET

Key Features

  • s.
  • 100V/1A,RDS(ON)= 310mΩ@VGS= 10V.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Con.

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SMD Type N-Channel MOSFET 2SK3046DS TraMnOsiSsFtoErsT ■ Features ● 100V/1A,RDS(ON)= 310mΩ@VGS= 10V ● High density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Symbol VDS VGS ID IDM Power Dissipation TA=25℃ TA=70℃ Thermal Resistance.