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2SK3224-Z - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 20 A (VGS = 10V).
  • RDS(ON) ＜ 40mΩ (VGS = 10V).
  • RDS(ON) ＜ 60mΩ (VGS = 4V).
  • Low Ciss : Ciss = 790 pF TYP. Drain Gate Body Diode Gate Protection Diode Source + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 0.15 1 .5 0 -0.15 +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 + 0.15 5 .5 5 -0.15 3.80 Unit: mm 1 Gate 2 Drain 3 Source.

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SMD Type N-Channel MOSFET 2SK3224-Z MOSFET ■ Features ● VDS (V) = 60V ● ID = 20 A (VGS = 10V) ● RDS(ON) ＜ 40mΩ (VGS = 10V) ● RDS(ON) ＜ 60mΩ (VGS = 4V) ● Low Ciss : Ciss = 790 pF TYP. Drain Gate Body Diode Gate Protection Diode Source + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 0.15 1 .5 0 -0.15 +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 + 0.15 5 .5 5 -0.15 3.80 Unit: mm 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (AC) (DC) Pulsed Drain Current (Note.1) Single Avalanche Current (Note.2) Power Dissipation Tc = 25°C Ta = 25°C Single Avalanche Energy (Note.