2SK3224 Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
2SK3224 Key Features
- Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
- Low Ciss : Ciss = 790 pF TYP
- Built-in Gate Protection Diode
- TO-251/TO-252 package