2SK3269-ZJ Datasheet | Kexin Semiconductor

Features - VDS (V) = 100V - ID = 25 A (VGS = 10V) - RDS(ON) ＜ 100mΩ (VGS = 10V) D - Low on-resistance, Low Qg - High avalanche resistance - Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Tc = 25℃ PD Ta = 25℃ Single Avalanche Energy (Note.1) Thermal Resistance.Junction- to-Ambient Rth JA Thermal Resistance.Junction- to-Case Rth JC Junction Temperature Storage Temperature Range Tstg Rating 100 ±20 25 100 40 1.4 22.5 89.3 3.125 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) g FS Ciss Coss Crss td(on) tr td(off) tf VSD Test Conditions ID=1m A, VGS=0V VDS=80V, VGS=0V VDS=0V, VGS=±20V VDS=10V , ID=1m A VGS=10V, ID=12A VGS=10V, ID=12A VGS=0V, VDS=10V,...