2SK3269
2SK3269 is N-Channel MOSFET manufactured by Panasonic.
Features
- Low on-resistance, low Qg
- High avalanche resistance
(1.4)
Unit: mm
10.5±0.3 4.6±0.2 1.4±0.1
0.6±0.1
3.0±0.5 0 to 0.5
- For PDP
- For high-speed switching
1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2
0 to 0.3
- Absolute Maximum Ratings TC = 25°C
1 2 3
(10.2) (8.9)
(6.4) (1.4)
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability
- Power dissipation Ta = 25°C Channel temperature Storage temperature Note)
- : L = 0.2 m H, IL = 15 A, 1 pulse
Symbol VDSS VGSS ID IDP EAS PD Tch Tstg
Rating 100 ±20 ±25 ±100 22.5 40 1.4 150
- 55 to +150
Unit V V A A m J W
(2.1)
1: Gate 2: Drain 3: Source TO-220C-G1 Package
Marking Symbol: K3269
°C °C
Internal Connection
- Electrical Characteristics TC = 25°C ± 3°C
Parameter Drain-source surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (mon-source) Short-circuit output capacitance (mon-source) Reverse transfer capacitance (mon-source) Turn-on delay time Rise time Turn-off delay time Fall time
Publication date: March 2004
Symbol VDSS Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) Tr td(off) tf
Conditions ID = 1 m A, VGS = 0 VDS = 10 V, ID = 1 m A VDS = 80 V, VGS = 0 VGS = ±20 V, VDS = 0 VGS = 10 V, ID = 12 A VDS = 10 V, ID = 12 A VDS = 10 V, VGS = 0, f = 1 MHz
Min 100 2.0
Typ
Max
1.5±0.3...