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2SK3269 Datasheet N-channel MOSFET

Manufacturer: Panasonic

Overview: Power MOSFETs 2SK3269 N-channel enhancement mode MOSFET ■.

Key Features

  • s.
  • Low on-resistance, low Qg.
  • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5.
  • For PDP.
  • For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3.
  • Absolute Maximum Ratings TC = 25°C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
  • Power dissipation Ta = 25°C Channel temperature.

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