Datasheet4U Logo Datasheet4U.com

2SK3269 - N-Channel MOSFET

Key Features

  • s.
  • Low on-resistance, low Qg.
  • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5.
  • For PDP.
  • For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3.
  • Absolute Maximum Ratings TC = 25°C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
  • Power dissipation Ta = 25°C Channel temperature.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3269 N-Channel Enhacement Mode MOSFET Kexin
2SK3269-ZJ N-Channel MOSFET Kexin
2SK3262 N-Channel MOSFET INCHANGE
2SK3262-01MR N-Channel MOSFET Fuji Electric
2SK3264-01MR N-Channel MOSFET Fuji Electric

Other Datasheets by Panasonic

Part Number Description
2SK3268 Silicon N-Channel MOSFET
2SK321 N-Channel MOSFET
2SK301 N-Channel MOSFET
2SK3022 Silicon N-Channel Power F-MOS FET
2SK3023 Silicon N-Channel Power F-MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power MOSFETs 2SK3269 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Qg • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Channel temperature Storage temperature Note) *: L = 0.2 mH, IL = 15 A, 1 pulse Symbol VDSS VGSS ID IDP EAS PD Tch Tstg Rating 100 ±20 ±25 ±100 22.5 40 1.4 150 −55 to +150 Unit V V A A mJ W (2.