• Part: 2SK3269
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Panasonic
  • Size: 75.98 KB
Download 2SK3269 Datasheet PDF
Panasonic
2SK3269
2SK3269 is N-Channel MOSFET manufactured by Panasonic.
Features - Low on-resistance, low Qg - High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5 - For PDP - For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3 - Absolute Maximum Ratings TC = 25°C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability - Power dissipation Ta = 25°C Channel temperature Storage temperature Note) - : L = 0.2 m H, IL = 15 A, 1 pulse Symbol VDSS VGSS ID IDP EAS PD Tch Tstg Rating 100 ±20 ±25 ±100 22.5 40 1.4 150 - 55 to +150 Unit V V A A m J W (2.1) 1: Gate 2: Drain 3: Source TO-220C-G1 Package Marking Symbol: K3269 °C °C Internal Connection - Electrical Characteristics TC = 25°C ± 3°C Parameter Drain-source surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (mon-source) Short-circuit output capacitance (mon-source) Reverse transfer capacitance (mon-source) Turn-on delay time Rise time Turn-off delay time Fall time Publication date: March 2004 Symbol VDSS Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) Tr td(off) tf Conditions ID = 1 m A, VGS = 0 VDS = 10 V, ID = 1 m A VDS = 80 V, VGS = 0 VGS = ±20 V, VDS = 0 VGS = 10 V, ID = 12 A VDS = 10 V, ID = 12 A VDS = 10 V, VGS = 0, f = 1 MHz Min 100 2.0 Typ Max 1.5±0.3...