2SK3269
2SK3269 is N-Channel Enhacement Mode MOSFET manufactured by Kexin Semiconductor.
Features
4.5 V drive available Low on-state resistance RDS(on)1 = 12 m MAX. (VGS = 10 V, ID = 18 A) Low gate charge QG = 30 n C TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) Built-in gate protection diode Surface mount device available
+0.2 5.28 -0.2
+0.2 8.7 -0.2
TO-263
+0.2
4.57 +0.1
-0.2
1.27-0.1
Unit: mm
+0.1 1.27 -0.1
+0.2 2.54 -0.2 15.25-+00..22 5.60
1.27+0.1 -0.1
0.1max
2.54+0.2 -0.2
5.08+0.1 -0.1
0.81+0.1 -0.1
0.4+0.2 -0.2
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation
Ta=25
Tc=25
Channel temperature
Storage temperature
- PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
VGSS
Idp
-...
