2SK3355
2SK3355 is MOS Field Effect Transistor manufactured by Kexin Semiconductor.
Features
Super low on-state resistance: RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss = 9800 p F TYP. Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation TA=25 TC=25
Channel temperature Storage temperature
- PW 10 s,Duty Cycle 1%
Symbol VDSS
VGSS(AC) ID Idp
- PD
Tch Tstg
TO-263
+0.2
4.57 +0.1
-0.2
1.27-0.1
Unit: mm
+0.1 1.27 -0.1
+0.2 2.54 -0.2 15.25-+00..22 5.60
+0.2 8.7 -0.2
+0.2 5.28 -0.2
1.27+0.1 -0.1
0.1max
2.54+0.2 -0.2
5.08+0.1 -0.1
0.81+0.1 -0.1
0.4+0.2 -0.2
Rating
Unit
1.5 W
-55 to +150
1 Gate 2 Drain 3 Source
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance
Drain to source on-state...
