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2SK3355 - N-Channel MOSFET

General Description

The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A).
  • Low Ciss: Ciss = 9800 pF TYP.
  • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 5 DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3355 2SK3355-S 2SK3355-ZJ 2SK3355-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A) • Low Ciss: Ciss = 9800 pF TYP. • Built-in gate protection diode Note TO-220SMD package is produced only in Japan.