2SK3365
2SK3365 is MOS Field Effect Transistor manufactured by Kexin Semiconductor.
Features
Super low on-state resistance: RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21m MAX. (VGS = 4.5 V, ID = 15A) RDS(on)3 = 29m MAX. (VGS = 4 V, ID = 15A) Low Ciss: Ciss = 1300 p F TYP. Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
+0.2 9.70 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+0.15 1.50 -0.15
+0.15 5.55 -0.15
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.15 0.50 -0.15
+0.28 1.50 -0.1
+0.25 2.65 -0.1
1 Gate 2 Drain 3 Source
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation TA=25 TC=25
Channel temperature Storage temperature
- PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VDSS
VGSS
Idp
-...
