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2SK3365 - N-Channel MOSFET

General Description

The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers.

Key Features

  • Low on-resistance RDS(on)1 = 14 mΩ (MAX. ) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX. ) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX. ) (VGS = 4.0 V, ID = 15 A).
  • Low Ciss : Ciss = 1300 pF (TYP. ).
  • Built-in gate protection diode.

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Datasheet Details

Part number 2SK3365
Manufacturer NEC
File Size 63.53 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3365 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. ORDERING INFORMATION PART NUMBER 2SK3365 2SK3365-Z PACKAGE TO-251 TO-252 FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 1300 pF (TYP.) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±30 ±120 36 1.