2SK3365 Datasheet | NEC

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook puters. ORDERING INFORMATION PART NUMBER 2SK3365 2SK3365-Z PACKAGE TO-251 TO-252 FEATURES - Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A) - Low Ciss : Ciss = 1300 p F (TYP.) - Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±30 ±120 36 1.0 150 - 55 to + 150 V V A A W W °C °C Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty cycle ≤ 1 % THERMAL RESISTANCE Channel to case Channel to ambient Rth(ch-C) Rth(ch-A) 3.48 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14255EJ1V0DS00 (1st edition) Date Published September 1999 NS CP(K) Printed in Japan © ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 30 A, VGS = 0 V IF = 30 A, VGS = 0 V di/dt = 100 A/µs ID...