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2SK3386 - MOS Field Effect Transistor

Key Features

  • Low on-resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 36 m MAX. (VGS = 4.0 V, ID = 17A) Low Ciss : Ciss = 2100 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp.
  • PD Tch Tstg TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +0.15 1.50 -0.15.

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SMD Type MOSFICET MOS Field Effect Transistor 2SK3386 Features Low on-resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 36 m MAX. (VGS = 4.0 V, ID = 17A) Low Ciss : Ciss = 2100 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.28 1.50 -0.1 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.2 9.70 -0.2 Rating Unit 60 V 20 V 30 A 100 A 36 W 1.0 150 -55 to +150 +0.25 2.65 -0.1 +0.15 5.55 -0.