2SK3386 Datasheet Mos Field Effect Transistor

Manufacturer: Kexin Semiconductor

Overview: SMD Type MOSFICET MOS Field Effect Transistor 2SK3386.

Datasheet Details

Low on-resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 36 m MAX. (VGS = 4.0 V, ID = 17A) Low Ciss : Ciss = 2100 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp.
PD Tch Tstg TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +0.15 1.50 -0.15.

Brand Logo	Part Number	Description	Manufacturer
	2SK3386	N-Channel MOSFET	NEC