2SK3386
2SK3386 is MOS Field Effect Transistor manufactured by Kexin Semiconductor.
Features
Low on-resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 36 m MAX. (VGS = 4.0 V, ID = 17A) Low Ciss : Ciss = 2100 p F TYP. Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation TC=25 TA=25
Channel temperature Storage temperature
- PW 10 s,Duty Cycle 1%
Symbol VDSS VGSS ID Idp
- PD
Tch Tstg
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
+0.15 1.50 -0.15
+0.15 0.50 -0.15
+0.28 1.50 -0.1
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.2 9.70 -0.2
Rating
Unit
36 W
-55 to +150
+0.25 2.65 -0.1
+0.15 5.55 -0.15
Unit: mm
1 Gate 2 Drain 3 Source
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance
Drain to source on-state...
