2SK3386 - N-Channel MOSFET

NEC

General Description

The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

Low On-state Resistance 5 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A).
Low Ciss : Ciss = 2100 pF TYP.
Built-in Gate Protection Diode.
TO-251/TO-252 package (TO-251).

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2SK3386 n-channel mosfet by NEC - Datasheet Preview

Datasheet Details

Part number	2SK3386
Manufacturer	NEC
File Size	42.09 KB
Description	N-Channel MOSFET
Datasheet	2SK3386 Datasheet

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Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3386 2SK3386-Z PACKAGE TO-251 TO-252 DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance 5 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) 5 5 Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 ±34 ±120 40 1.