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2SK3430-ZJ - N-Channel MOSFET

Key Features

  • s.
  • VDS S = 40V.
  • ID = 80 A (VGS = 10V).
  • RDS(ON) ＜ 7.3mΩ (VGS = 10V).
  • RDS(ON) ＜ 15mΩ (VGS = 4V).
  • Low Ciss: Ciss = 2800 pF TYP. Drain Gate Body Diode Gate Protection Diode Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Single Avalanche Current (Note.2) Power Dissipation Single Avalanche Energy Tc = 25℃ Ta = 25℃ (Note.2) Thermal Resistance. Junction- to-Am.

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SMD Type N-Channel MOSFET 2SK3430-ZJ MOSFET ■ Features ● VDS S = 40V ● ID = 80 A (VGS = 10V) ● RDS(ON) ＜ 7.3mΩ (VGS = 10V) ● RDS(ON) ＜ 15mΩ (VGS = 4V) ● Low Ciss: Ciss = 2800 pF TYP. Drain Gate Body Diode Gate Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Single Avalanche Current (Note.2) Power Dissipation Single Avalanche Energy Tc = 25℃ Ta = 25℃ (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAS PD EAS RthJA RthJC TJ Tstg Rating 40 ±20 80 200 37 84 1.5 137 83.3 1.49 150 -55 to 150 Note.1: PW ≤ 10 us, Duty Cycle ≤ 1 % Note.