VBsemi Electronics 2SK3430
N-Channel MOSFET
| Part No. | 2SK3430 |
|---|---|
| Datasheet | 2SK3430 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % Rg and UIS Tested
APPLICATIONS
● Synchronous Rectification● Power Supplies D RoHS COMPLIANT G GDS Top View
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg S N-Channel MOSFET Limit 40 ± 20 110a, c 90c 31b 25b 270 85 320 110a, c 2.6b 312a 200 3.13b 2.0b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb Steady State RthJA Maximum Junction-to-Case Steady State RthJC Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature.
