2SK3430
Key Features
- Super low on-state resistance: RDS(on)1 = 7.3 m MAX
- (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 m MAX
- (VGS = 4 V, ID = 40 A) Low Ciss: Ciss = 2800 pF TYP
- Built-in gate protection diode
- Part: 2SK3430
- Description: MOS Field Effect Transistor
- Category: Transistor
- Manufacturer: Kexin Semiconductor
- Size: 41.17 KB