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2SK3431 - MOS Field Effect Transistor

Features

  • Super low on-state resistance: RDS(on)1 = 5.6m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9 m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss = 6100 pF TYP. Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate.

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SMD Type MOS Field Effect Transistor 2SK3431 MOSFET Features Super low on-state resistance: RDS(on)1 = 5.6m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9 m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss = 6100 pF TYP. Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol Rating Unit VDSS 40 V VGSS 20 V ID 83 A Idp * 332 A 100 PD W 1.
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