2SK3431 Datasheet

The 2SK3431 is a N-Channel MOSFET Transistor.

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Part Number2SK3431
ManufacturerInchange Semiconductor
Overview ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuou.
*Drain Current : ID= 83A@ TC=25℃
*Drain Source Voltage : VDSS= 40V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*motor drive, DC-DC converter, power sw.
Part Number2SK3431
DescriptionMOS Field Effect Transistor
ManufacturerKexin Semiconductor
Overview SMD Type MOS Field Effect Transistor 2SK3431 MOSFET Features Super low on-state resistance: RDS(on)1 = 5.6m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9 m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss . Super low on-state resistance: RDS(on)1 = 5.6m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9 m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss = 6100 pF TYP. Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.2.
Part Number2SK3431
DescriptionN-Channel MOSFET
ManufacturerNEC
Overview The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 42 A) 5 RDS(o.
* Super low on-state resistance: RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 42 A) 5 RDS(on)2 = 8.9 mΩ MAX. (VGS = 4 V, ID = 42 A)
* Built-in gate protection diode 5
* Low Ciss: Ciss = 6100 pF TYP. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Cu.