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2SK3494 - N-channel enhancement mode MOSFET

Key Features

  • Low on-resistance, low Qg High avalanche resistance +0.2 8.7 -0.2 +0.1 1.27 -0.1 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm 1.27+0.1 -0.1 0.1max +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 5.28 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 Symbol Rating Unit VDSS 250 V VG.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type MOSFET N-Channel Enhancement Mode MOSFET 2SK3494 Features Low on-resistance, low Qg High avalanche resistance +0.2 8.7 -0.2 +0.1 1.27 -0.1 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm 1.27+0.1 -0.1 0.1max +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 5.28 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 Symbol Rating Unit VDSS 250 V VGSS 30 V ID 20 A Idp * 80 A 50 PD W 1.4 Tch 150 Tstg -55 to +150 0.4+0.2 -0.