2SK3494 Datasheet | Panasonic

Features - Low on-resistance, low Qg - High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5 - For PDP - For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3 - Absolute Maximum Ratings TC = 25°C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability - Power dissipation Ta = 25°C Channel temperature Storage temperature Symbol VDSS VGSS ID IDP EAS PD Tch Tstg Rating 250 ±30 20 80 657 50 1.4 150 - 55 to +150 Unit V V A A m J W (2.1) 1: Gate 2: Drain 3: Source TO-220C-G1 Package Marking Symbol: K3494 °C °C Note) - : L = 2.79 m H, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C - Electrical Characteristics TC = 25°C ± 3°C Parameter Drain-source surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (mon-source) Short-circuit output capacitance (mon-source) Reverse transfer capacitance (mon-source) Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) Tr td(off) tf VDD ≈ 100 V, ID = 10 A RL = 10 Ω, VGS = 10 V Conditions ID = 1 m A, VGS = 0 VDS = 10 V, ID = 1 m A VDS = 200 V, VGS = 0 VGS = ±30 V, VDS = 0 VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A VDS = 25 V, VGS = 0, f = 1 MHz 7 82 14 2 450 356 40 36 20 184 29 Min 250 2.0 4.0 10 ±1 105 Typ Max Unit V V µA µA mΩ S p F p F p F ns ns ns ns 1.5±0.3 - Applications 10.1±0.3 Publication date: March 2004 SJG00037AED - Electrical Characteristics (continued) TC = 25°C ± 3°C Parameter Diode foward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol VDSF trr Qrr Qg Qgs Qgd Rth(ch-c) Rth(ch-a) Conditions IDR = 20 A, VGS = 0 L = 230 µH, VDD =...