Kexin Electronics 2SK3503
N-Channel MOSFET
FEATURES
● VDS (V) = 16V● ID = 100 mA (VGS = 1.5V)
● RDS(ON) < 50Ω (VGS = 1.5V)
● RDS(ON) < 15Ω (VGS = 2.5V)
● RDS(ON) < 12Ω (VGS = 4V) Gate 21 +0.151.6 -0.15 Drain Body Diode 3 0.5 +0.1 -0.1 0.3±0.05
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Source +0.050.75 -0.05 +0.10.8 -0.1 1. Gate 2. Source 3. Drain Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Pulsed Drain Current (Note.1) Power Dissipation Tc=25℃ Junction Temperature Storage Temperature Range Note.1: PW ≤ 10 μs, Duty Cycle ≤ 1%●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Symbol VDS VGS ID IDM PD TJ Tstg Rating 16 ±7 100 400 200 150 -55 to 150 Unit V mA mW ℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Cut-off Voltage Static Dr