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2SK3503 - N-Channel MOSFET

General Description

The 2SK3503 is an N-channel vertical MOS FET.

Because it can be driven www.DataSheet4U.com by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.

Key Features

  • Automatic mounting supported.
  • Gate can be driven by a 1.5 V power source.
  • Because of its high input impedance, there’s no need to consider a drive current.
  • Since bias resistance can be omitted, the number of components required can be reduced 1.6 ± 0.1 0.8 ± 0.1 3 0 to 0.1 2 0.2 +0.1.
  • 0 0.5 0.5 0.6 0.75 ± 0.05 1 1.0 1.6 ± 0.1.

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📁 Similar Datasheet

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2SK3501-01 N-CHANNEL SILICON POWER MOSFET Fuji Electric

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3507 SWITCHING N-CHANNEL POWER MOSFET
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2SK3054 N-Channel MOSFET
2SK3055 N-Channel MOSFET
2SK3056 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven www.DataSheet4U.com by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 FEATURES • Automatic mounting supported • Gate can be driven by a 1.5 V power source • Because of its high input impedance, there’s no need to consider a drive current • Since bias resistance can be omitted, the number of components required can be reduced 1.6 ± 0.1 0.8 ± 0.1 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 0.6 0.75 ± 0.05 1 1.