2SK3503
2SK3503 is N-Channel MOSFET manufactured by NEC.
DESCRIPTION
The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven .. by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DRAWING (Unit: mm)
0.3 +0.1
- 0 0.15 +0.1
- 0.05
FEATURES
- Automatic mounting supported
- Gate can be driven by a 1.5 V power source
- Because of its high input impedance, there’s no need to consider a drive current
- Since bias resistance can be omitted, the number of ponents required can be reduced
1.6 ± 0.1
0.8 ± 0.1
3 0 to 0.1 2 0.2 +0.1
- 0 0.5 0.5 0.6 0.75 ± 0.05 1
1.0 1.6 ± 0.1
ORDERING INFORMATION
PART NUMBER 2SK3503 PACKAGE SC-75 (USM)
1: Source 2: Gate 3: Drain
Marking: E1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (Tc = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
16 ±7.0 ±0.1 ±0.4 200 150
- 55 to +150
V V A A m W °C °C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TC = 25°C) Note2 Channel Temperature Storage Temperature
Gate
Body Diode
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 3.0 cm2 × 0.64 mm
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D15395EJ2V0DS00 (2nd edition) Date Published November 2004 NS CP(K) Printed in Japan
The mark shows major...
