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2SK3560 - Silicon N-channel power MOSFET

Key Features

  • Low on-resistance, low Qg High avalanche resistance For high-speed switching + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID I.

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Full PDF Text Transcription (Reference)

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SMD Type Silicon N-channel power MOSFET 2SK3560 TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance, low Qg High avalanche resistance For high-speed switching + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP PD Rating 230 30 30 120 3 50 150 -55 to +150 Unit V V A A W 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.