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2SK3560 - N-Channel MOSFET

Key Features

  • s.
  • Low on-resistance, low Qg.
  • High avalanche resistance 10.1±0.3 (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 Unit: mm 0.6±0.1 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 (10.2) (8.9) 1 2 3 (6.4) (1.4) (2.1) 3.0±0.5 0 to 0.5.
  • Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP PD Rating 230 ±30 30 120 50 3 150.
  • 55 to +150 °C °C Unit V V A A.

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Power MOSFETs 2SK3560 Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features • Low on-resistance, low Qg • High avalanche resistance 10.1±0.3 (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 Unit: mm 0.6±0.1 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 (10.2) (8.9) 1 2 3 (6.4) (1.4) (2.1) 3.0±0.5 0 to 0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP PD Rating 230 ±30 30 120 50 3 150 −55 to +150 °C °C Unit V V A A W 0 to 0.