2SK3716
Features
Super low on-state resistance: RDS(on)1 = 6.5 mÙ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mÙ MAX. (VGS = 4.5 V, ID = 30 A) Low Ciss: Ciss = 2700 p F TYP. Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation TA=25 TC=25
Channel temperature Storage temperature
- PW 10 s,Duty Cycle 1%
Symbol VDSS VGSS ID Idp
- PD
Tch Tstg
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
+0.15 1.50 -0.15
+0.15 0.50 -0.15
+0.28 1.50 -0.1
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.2 9.70 -0.2
Rating
Unit
1.0 W
-55 to +150
+0.25 2.65 -0.1
+0.15 5.55 -0.15
Unit: mm
1 Gate 2 Drain 3 Source
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance
Drain to source on-state...
