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2SK3731 - N-channel enhancement mode MOSFET

Key Features

  • Low on-resistance, low Qg High avalanche resistance For high-speed switching Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
  • Power dissipation Power dissipation Ta = 25 Channel temperature Storage temperature.
  • : L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25 Symbol VDSS VGSS ID IDP EAS PD Tch Tstg TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type TransistIoCrs N-channel enhancement mode MOSFET 2SK3731 Features Low on-resistance, low Qg High avalanche resistance For high-speed switching Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Power dissipation Ta = 25 Channel temperature Storage temperature *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25 Symbol VDSS VGSS ID IDP EAS PD Tch Tstg TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 + 8 .7 0.2 -0.2 5 + 5 .2 8 0.2 -0.2 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 .