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2SK3731 - N-Channel MOSFET

Key Features

  • s.
  • Low on-resistance, low Qg.
  • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5.
  • For PDP.
  • For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3.
  • Absolute www. DataSheet4U. com Maximum Ratings TC = 25°C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25°C Chan.

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Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Qg • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3 ■ Absolute www.DataSheet4U.com Maximum Ratings TC = 25°C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25°C Channel temperature Storage temperature * Symbol VDSS VGSS ID IDP EAS PD Tch Tstg Rating 230 ± 30 20 80 668 50 1.4 150 − 55 to + 150 Unit V V A A mJ W (2.1) 1: Gate 2: Drain 3: Source TO-220C-G1 Package Marking Symbol: K3731 °C °C Note) *: L = 2.