Datasheet Summary
Power MOSFETs
N-channel enhancement mode MOSFET
- Features
- Low on-resistance, low Qg
- High avalanche resistance
(1.4)
Unit: mm
10.5±0.3 4.6±0.2 1.4±0.1
0.6±0.1
3.0±0.5 0 to 0.5
- For PDP
- For high-speed switching
1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2
0 to 0.3
- Absolute ..
Maximum Ratings TC = 25°C
1 2 3
(10.2) (8.9)
(6.4) (1.4)
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25°C Channel temperature Storage temperature
- Symbol VDSS VGSS ID IDP EAS PD Tch Tstg
Rating 230 ± 30 20 80 668 50 1.4 150
- 55 to + 150
Unit V V A A mJ W
(2.1)
1: Gate 2:...
