A9451 Datasheet | Kexin Semiconductor

Features - VDS (V) =-20V - ID =-2.3A (VGS =±12V) - RDS(ON) ＜ 0.135Ω (VGS =-4.5V) - RDS(ON) ＜0.240Ω (VGS =-2.5V) - Marking: A9451 P-Channel MOSFET A9451 1.70 0.1 MOSFET 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID PD Rth JA TJ Tstg Rating -20 ±12 -2.3 0.5 250 150 -55 to +150 Unit V A W ℃/W ℃ - Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=10μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250m A Static Drain-Source On-Resistance1 RDS(On) VGS=-4.5V, ID=-2.3A VGS=-2.5V, ID=-1.0A Forward Transconductance1 g FS VDS=-5V, ID=-2.3A Input Capacitance Ciss...