Kexin Electronics A9451
P-Channel MOSFET
| Part No. | A9451 |
|---|---|
| Datasheet | A9451 Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-20V● ID =-2.3A (VGS =±12V)
● RDS(ON) ＜ 0.135Ω (VGS =-4.5V)
● RDS(ON) ＜0.240Ω (VGS =-2.5V)
● Marking: A9451 P-Channel MOSFET A9451 1.70 0.1 MOSFET 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID PD RthJA TJ Tstg Rating -20 ±12 -2.3 0.5 250 150 -55 to +150 Unit V A W ℃/W ℃●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=10μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250mA Static Drain-Source On-Resistance1 RDS(On) VGS=-4.5V, ID=-2.3A VGS=-2.5V, ID=-1.0A Forward Transconductance1 gFS VDS=-5V, ID=-2.3A Input Capacitance Ciss Output Capacitance Coss VGS=0V, VDS=-2...