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BA597 - Silicon PIN Diode

Key Features

  • RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.050.3 -0.05 +0.11.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.050.1 -0.02 Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Forward current Total power dissipation TS Junction tem perature 40 1) Storage tem perature range Note: 1.Package m ounted on alum inum 15 m m Sym bol VR IF T to t Tj T stg V a lu e 50 100 250 150 -55 to +150 16.7 m m 0.7.

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SMD Type Silicon PIN Diode BA597 Diodes Features RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.050.3 -0.05 +0.11.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.050.1 -0.02 Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Forward current Total power dissipation TS Junction tem perature 40 1) Storage tem perature range Note: 1.Package m ounted on alum inum 15 m m Sym bol VR IF T to t Tj T stg V a lu e 50 100 250 150 -55 to +150 16.7 m m 0.7 m m . U n it V mA mW Electrical Characteristics Ta = 25 Parameter Reverse current Forward voltage Diode capacitance Forward resistance Charge carrier lifetime Symbol Conditions Min Typ Max Unit IR VR =30 V 20 nA VF IF = 100 mA 0.