FEATURES
RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.050.3 -0.05 +0.11.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.050.1 -0.02 Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Forward current Total power dissipation TS Junction tem perature 40 1) Storage tem perature range Note: 1.Package m ounted on alum inum 15 m m Sym bol VR IF T to t Tj T stg V a lu e 50 100 250 150 -55 to +150 16.7 m m 0.7 m m . U n it V mA mW ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Reverse current Forward voltage Diode capacitance Forward resistance Charge carrier lifetime Symbol Conditions Min Typ Max Unit IR VR =30 V 20 nA VF IF = 100 mA 0.9 V VR = 10 V, f = 1 MHz CT VR = 0 V, f = 100 MHz 0.52 0.27 pF IF = 1.5 mA, f = 100 MHz rf IF = 10 mA, f = 100 MHz 22 4.2 L IF = 10 mA, IR = 6 mA, IR = 3 mA 2.5 S Marking Marking yellow R