BA597 Datasheet PDF

MAXIMUM RATINGS

Parameter Reverse voltage Forward current Total power dissipation TS ≤ 40 °C1) Junction temperature Storage temperature range Symbol Values 50 100 250 150 – 55 … + 150 Unit V mA mW °C °C VR IF Ptot Tj Tstg 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94 BA 597 Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse current VR = 30 V Forward voltage IF = 100 mA Diode capacitance VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz Forward resistance IF = 1.5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime Value typ. – 0.9 0.52 0.27 22 4.2 2.5 max. nA – 20 V – – pF – – – – Ω – – τL – – – – µs Unit IR VF CT rf IF = 10 mA, IR = 6 mA, IR = 3 mA Semiconductor Group 2 BA 597 Diode capacitance CT = f (VR) f = 1 MHz, 100 MHz Forward resistance rt = (IF), f = 100 MHz 3rd Harmonic intercept point vs forward current f = 100 MHz Semiconductor Group 3