FEATURES
Low barrier diode for detectors up to GHz frequencies. Diodes Unit: mm ABSOLUTE MAXIMUM RATINGS
Ta = 25 P aram eter Reverse voltage Forward current Total power dissipation, TS 85 Junction temperature Storage temperature range Junction - ambient1) Junction - soldering point Note 1.Package mounted on alumina 15 mm Symbol VR IF Ptot Tj Tstg Rth JA Rth JS Value 40 20 100 150 -55 to + 150 810 650 16.7 mm 0.7 mm. Unit V mA mW K/W K/W ELECTRICAL CHARACTERISTICS
Ta = 25 P aram eter Reverse current Forward voltage Diode capacitance Case capacitance Differential resistance Series inductance Symbol IR IF CT CC RO LS Test Condition VR = 40 V IF = 2 mA f = 1 MHz; VR = 0 VR = 0, f = 10 KHz Min Typ Max Unit 10 A 0.58 1 V 0.35 0.6 pF 0.1 pF 225 K 2 nH Marking Marking 62 1