• Part: BAT62
  • Manufacturer: Infineon
  • Size: 224.00 KB
Download BAT62 Datasheet PDF
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BAT62 Description

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT62 a suitable choice for mixer and detector applications for frequencies up to 6 GHz.