BAT62 Datasheet | Infineon

Surface mount silicon RF Schottky diode, anti-parallel pair Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT62 a suitable choice for mixer and detector applications for frequencies up to 6 GHz. Feature list - Low inductance LS = 2 nH (typical) - Low capacitance C = 0.41 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz - Industry standard SOT143 package (2.9 mm x 2.4 mm x 1 mm) - Pb-free, RoHS pliant and halogen-free Product validation Qualified for industrial applications according...