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BAT62
Surface mount silicon RF Schottky diode, anti-parallel pair
Product description
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT62 a suitable choice for mixer and detector applications for frequencies up to 6 GHz.
Feature list
• Low inductance LS = 2 nH (typical) • Low capacitance C = 0.41 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz • Industry standard SOT143 package (2.9 mm x 2.4 mm x 1 mm) • Pb-free, RoHS compliant and halogen-free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
BAT62 Datasheet
