BAT62 Datasheet and Specifications PDF

SMD Type Silicon Schottky Diode BAT62 Features Low barrier diode for detectors up to GHz frequencies. Diodes Unit: mm Absolute Maximum Ratings Ta = 25 P aram eter Reverse voltage Forward current .

Low barrier diode for detectors up to GHz frequencies. Diodes Unit: mm Absolute Maximum Ratings Ta = 25 P aram eter Reverse voltage Forward current Total power dissipation, TS 85 Junction temperature Storage temperature range Junction - ambient1) Junction - soldering point Note 1.Package mounted .

Silicon Schottky Diode q Low BAT 62 barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 62 Marking 62 Ordering C.

nductance Symbol min. IR VF CT CC R0 LS
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* Values typ.
* 0.58 0.35 0.1 225 2 max. 10 1 0.6
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* kΩ nH µA Unit V pF Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Semiconductor Group 2 BAT 62 Reverse current IR = f (VR) f = 1 MHz Diode capa.

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction .

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* Low inductance LS = 2 nH (typical)
* Low capacitance C = 0.41 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz
* Industry standard SOT143 package (2.9 mm x 2.4 mm x 1 mm)
* Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to t.