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BAW101 - Silicon Switching Diode Array

Key Features

  • Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um R atings T a = 25 Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipation, TS 35 Junction tem perature Storage tem perature range Junction - am bient1) Junction - soldering point N o te 1.Package m ounted on epoxy pcb 40 m m Sym bol VR VRM IF IFM IFS P tot Tj T stg R th JA R th JS V alue 300 300 250 500 4.5 350 150.

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SMD Type Silicon Switching Diode Array BAW101 Features Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um R atings T a = 25 Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipation, TS 35 Junction tem perature Storage tem perature range Junction - am bient1) Junction - soldering point N o te 1.Package m ounted on epoxy pcb 40 m m Sym bol VR VRM IF IFM IFS P tot Tj T stg R th JA R th JS V alue 300 300 250 500 4.5 350 150 -65 to +150 470 330 40 m m 1.5 m m /6 cm 2 Cu U nit V V mA mA A mW K /W K /W www.kexin.com.