Datasheet4U Logo Datasheet4U.com

BC868 - NPN Medium Power Transistor

Key Features

  • High current Two current gain selections 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 32 V Collector-emitter voltage (open base) VCEO 20 V Emitter-base voltage (open collector) VEBO 5 V Collector current IC 1 A Peak collector current ICM 2 A Peak base current IBM 200 mA Total power dissipation.
  • 1 and.
  • 2 0.5 W.
  • 1 and.
  • 3 Ptot 0.85 W.
  • 1 and.
  • 4 1.2 W Sto.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BC868 2A NPN medium power transistors nexperia
BC868 NPN medium power transistor NXP
BC868 NPN medium power Transistor GME
BC868 Silicon NPN transistor BLUE ROCKET ELECTRONICS
BC868 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Zetex Semiconductors

Other Datasheets by Kexin Semiconductor

Part Number Description
BC860 PNP Transistors
BC860B PNP Transistors
BC860C PNP Transistors
BC869 PNP Medium Power Transistor
BC846AW NPN General Purpose Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors NPN Medium Power Transistor BC868 Features High current Two current gain selections 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 32 V Collector-emitter voltage (open base) VCEO 20 V Emitter-base voltage (open collector) VEBO 5 V Collector current IC 1 A Peak collector current ICM 2 A Peak base current IBM 200 mA Total power dissipation *1 and *2 0.5 W *1 and *3 Ptot 0.85 W *1 and *4 1.