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BF620 - Silicon NPN epitaxial planer type Transistors

Key Features

  • Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage BF620 (open emitte) BF622 collector-emitter voltage BF620 (open-base ) BF622 emitter-base voltage (open collector) collector current (DC) peak collector current peak base current total power dissipation Tamb 25.
  • storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient.
  • thermal resistance from.

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SMD Type Transistors Silicon NPN epitaxial planer type BF620; BF622 Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage BF620 (open emitte) BF622 collector-emitter voltage BF620 (open-base ) BF622 emitter-base voltage (open collector) collector current (DC) peak collector current peak base current total power dissipation Tamb 25 * storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient * thermal resistance from junction to soldering point Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rth j-s Rating 300 250 300 250 5 50 100 50 1.