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BSP230 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-300V.
  • ID =-0.21 A (VGS =-10V).
  • RDS(ON) ＜ 17Ω (VGS =-10V).
  • High-speed switching D G S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Junctio.

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Full PDF Text Transcription (Reference)

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SMD Type MOSFET P-Channel MOSFET BSP230 (KSP230) ■ Features ● VDS (V) =-300V ● ID =-0.21 A (VGS =-10V) ● RDS(ON) ＜ 17Ω (VGS =-10V) ● High-speed switching D G S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating -300 ±20 -0.21 -0.75 1.5 83.