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BSP230 - P-channel enhancement mode vertical D-MOS transistor

General Description

P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package.

Fig.1 Simplified outline and symbol.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 17 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interruptor in telephone sets • Relay, high speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain CAUTION 1 Top view handbook, halfpage BSP230 4 d g s 2 3 MAM121 Fig.1 Simplified outline and symbol.