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BSS138E - N-Channel MOSFET

Features

  • s.
  • VDS (V) = 50V.
  • ID = 300 mA (VGS = 10V).
  • RDS(ON) ＜ 2.5Ω (VGS = 10V).
  • RDS(ON) ＜ 3.5Ω (VGS =2.5V).
  • Low On-Resistance.
  • ESD Rating: 1.5KV HBM.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage RGS≤ 20KΩ Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Junction Temperature Storage Temperature Range SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 0.4 Unit: mm +0.2 1.6 -0.1 +0.2 2.8.

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Full PDF Text Transcription

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SMD Type MOSFET N-Channel MOSFET BSS138E (KSS138E) ■ Features ● VDS (V) = 50V ● ID = 300 mA (VGS = 10V) ● RDS(ON) ＜ 2.5Ω (VGS = 10V) ● RDS(ON) ＜ 3.5Ω (VGS =2.5V) ● Low On-Resistance ● ESD Rating: 1.5KV HBM ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage RGS≤ 20KΩ Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 0.4 Unit: mm +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 Symbol VDS VDG VGS ID PD RthJA TJ Tstg Rating 50 50 ±20 300 300 417 150 -55 to 150 Unit V mA mW ℃/W ℃ 0-0.1 +0.1 0.68 -0.1 +0.2 1.1 -0.1 0.15 +0.02 -0.02 1. Gate 2. Source 3.
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